Circuit element including a layer of a stress-creating material providing a variable stress and method for the formation thereof

ABSTRACT

A transistor includes a source region, a drain region, a channel region, a gate electrode and a layer of a stress-creating material. The stress-creating material provides a stress that is variable in response to a signal acting on the stress-creating material. The layer of stress-creating material is arranged to provide a stress in at least the channel region. The stress provided in at least the channel region is variable in response to the signal acting on the stress-creating material. Layers of stress-creating material providing a stress that is variable in response to a signal acting on the stress-creating material may also be used in circuit elements other than transistors, for example, resistors.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Generally, the present disclosure relates to the field of integratedcircuits, and, more particularly, to integrated circuits includingtransistors and/or other circuit elements including a stress-creatingmaterial.

2. Description of the Related Art

Integrated circuits include a large number of circuit elements whichinclude, in particular, field effect transistors. In a field effecttransistor, a gate electrode may be separated from a channel region by agate insulation layer that provides an electrical insulation between thegate electrode and the channel region. Adjacent the channel region, asource region and a drain region are formed.

The channel region, the source region and the drain region may be formedin a semiconductor material, wherein the doping of the channel region isdifferent from the doping of the source region and the drain region.Thus, there is a transition between differently doped semiconductormaterials, for example, a PN transition, or a transition between P- orN-doped semiconductor material and substantially undoped semiconductormaterial, between the source region and the channel region, and betweenthe channel region and the drain region.

In N-type transistors, the source and drain regions are doped with anN-type dopant, and the channel region may be P-doped or substantiallyundoped. In P-type transistors, the source and drain regions areP-doped, and the channel region may be N-doped or substantially undoped.

Depending on an electric voltage applied between the gate electrode andthe source region, the field effect transistor can be switched betweenan on-state, wherein there is a relatively high electrical conductancebetween the source region and the drain region, and an off-state,wherein there is a relatively low electrical conductance between thesource region and the drain region. The conductance of the channelregion in the on-state of the field effect transistor may depend on thedopant concentration in the channel region, the mobility of chargecarriers in the channel region, the extension of the channel region inthe width direction of the transistor and on the distance between thesource region and the drain region, which is commonly denoted as“channel length.”

For increasing the conductance of the channel region in the on-state ofthe transistor, it has been proposed to improve the mobility of chargecarriers in the channel region by modifying the lattice structure of thesemiconductor material wherein the channel region is formed. This may bedone by creating a tensile or compressive stress in the channel region.A compressive stress in the channel region can increase the mobility ofholes, leading to an increase of the conductivity of the channel regionof P-type transistors. Conversely, a tensile stress in the channelregion can increase the mobility of electrons, which can improve theconductivity of the channel region of N-type transistors.

For providing the stress in the channel region, a material layer havingan intrinsic stress may be formed over the transistor. The materiallayer may include, for example, silicon nitride, and may be formed, forexample, by means of a plasma enhanced chemical vapor depositionprocess. Depending on the parameters of the plasma enhanced chemicalvapor deposition process, such as, for example, composition, pressureand/or temperature of a reactant gas, a power of a radio frequencyelectric discharge created in the reactant gas and/or a bias voltageapplied to a substrate on which the transistor is provided, a tensile orcompressive intrinsic stress of the material layer may be provided.Moreover, a strength of the tensile or compressive intrinsic stress maybe controlled by varying the parameters of the plasma enhanceddeposition process.

However, the stress in the channel region of the transistor created byconventional material layers having an intrinsic stress typically issubstantially constant after the deposition of the material layer andcannot be adjusted afterwards. Therefore, the performance of thetransistor, in particular, the electrical conductance of the channelregion in the on-state of the transistor, which is linked to the stressin the channel region provided by the intrinsically stressed materiallayer, is substantially constant as well.

In view of the situation described above, the present disclosureprovides techniques that allow providing a stress in a channel region ofa transistor that can be modified after the manufacturing of thetransistor.

The present disclosure further provides techniques that allow varyingthe resistance of a semiconductor region in a circuit element other thana transistor by modifying a stress in the semiconductor region.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

An illustrative circuit element as disclosed herein includes asemiconductor region and a layer of a stress-creating material. Thestress-creating material provides a stress that is variable in responseto a signal acting on the stress-creating material. The layer ofstress-creating material is arranged to provide a stress in thesemiconductor region. The stress provided in the semiconductor region isvariable in response to the signal acting on the stress-creatingmaterial.

An illustrative circuit disclosed herein includes a current mirrorcircuit and a calibration circuit. The current mirror circuit includes afirst transistor in an input current path of the current mirror circuitand a second transistor in an output current path of the current mirrorcircuit. Each of the first and the second transistors includes a sourceregion, a drain region, a channel region and a gate electrode. At leastone of the first transistor and the second transistor includes a layerof a stress-creating material. The stress-creating material provides astress that is variable in response to a signal acting on thestress-creating material. The stress-creating material has a stresshysteresis wherein at least a portion of the stress provided in responseto the signal is maintained after removal of the signal. The layer ofstress-creating material is arranged to provide a stress in at least thechannel region of the transistor wherein it is provided, the stressbeing variable in response to the signal acting on the stress-creatingmaterial. The calibration circuit is adapted for calibrating the currentmirror circuit. The calibration includes detecting a current differencebetween a current flowing through the input current path and a ratiobetween a current flowing through the output current path and amultiplication factor and applying a signal to the stress-creatingmaterial in the at least one of the first transistor and the secondtransistor in response to the detected current difference, theapplication of the signal reducing the current difference.

An illustrative sensor disclosed herein includes a transistor and acircuit. The transistor includes a source region, a drain region, achannel region, a gate electrode and a layer of a stress-creatingmaterial. The stress-creating material provides a stress that isvariable in response to an external influence acting on thestress-creating material and is arranged to provide a stress in at leastthe channel region of the transistor. The stress provided in at leastthe channel region of the transistor is variable in response to theexternal influence acting on the stress-creating material. The circuitapplies a first voltage between the gate electrode and the sourceregion, applies a second voltage between the source region and the drainregion, and measures a current flowing between the source region and thedrain region in response to the first and the second voltage.

An illustrative inverter disclosed herein includes a pull-up transistor,a pull-down transistor and an input terminal. The pull-up transistor andthe pull-down transistor are electrically connected in series between ahigh voltage power supply terminal and a low voltage power supplyterminal. The input terminal is electrically connected to the pull-uptransistor and the pull-down transistor. The pull-up transistor isswitchable to an off-state by applying a high voltage to the inputterminal and to an on-state by applying a low voltage to the inputterminal. The pull-down transistor is switchable to an on-state byapplying a high voltage to the input terminal and to an off-state byapplying a low voltage to the input terminal. The pull-up transistorincludes a first layer of stress-creating material providing a variablestress in the channel region of the pull-up transistor that is variablein response to a voltage applied to the input terminal. The variablestress is adapted to increase a mobility of charge carriers in thechannel region of the pull-up transistor obtained in the on-state of thepull-up transistor compared to a mobility of charge carriers in thechannel region of the pull-up transistor obtained in the off-state ofthe pull-up transistor.

The pull-down transistor includes a second layer of a stress-creatingmaterial providing a stress in the channel region of the pull-downtransistor that is variable in response to the voltage applied to theinput terminal. The variable stress is adapted to increase a mobility ofcharge carriers in the channel region of the pull-down transistorobtained in the on-state of the pull-down transistor compared to amobility of charge carriers in the channel region of the pull-downtransistor obtained in the off-state of the pull-down transistor.

An illustrative memory cell disclosed herein includes a firsttransistor, a read terminal and a write terminal. The first transistorincludes a source region, a drain region, a channel region, a gateelectrode and a layer of stress-creating material. The stress-creatingmaterial provides a stress in the channel region that is variable inresponse to an electric field applied to the layer of stress-creatingmaterial. The stress-creating material has a stress hysteresis, whereinat least a portion of the stress provided in response to the electricfield is maintained after removal of the electric field. The firsttransistor further comprises at least one stress-control electrode thatis provided adjacent the layer of stress-creating material. The readterminal is electrically connected to the gate electrode of the firsttransistor. The write terminal is electrically connected to one of theat least one stress-control electrode of the first transistor.

An illustrative method disclosed herein includes providing a substrateincluding a semiconductor material. A gate insulation layer and a gateelectrode are formed over the semiconductor material. A source regionand a drain region are formed in the semiconductor material adjacent thegate electrode. A portion of the semiconductor material below the gateelectrode provides a channel region. A layer of a stress-creatingmaterial is formed over the source region, the drain region and the gateelectrode. The stress-creating material provides a stress in a channelregion that is variable in response to a signal acting on thestress-creating material.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1 a-1 e show schematic cross-sectional views of a semiconductorstructure according to an embodiment in stages of a method according toan embodiment;

FIG. 2 shows a circuit symbol for a transistor according to anembodiment provided in the semiconductor structure of FIGS. 1 a-1 e;

FIGS. 3 a-3 b show schematic cross-sectional views of a semiconductorstructure according to an embodiment;

FIG. 4 shows a circuit symbol for a transistor according to anembodiment provided in the semiconductor structure according to FIGS. 3a-3 b;

FIG. 5 shows a schematic diagram illustrating a dependency of an outputcurrent of a transistor on a drain-source voltage for different stressesin its channel region;

FIG. 6 shows a schematic diagram illustrating a stress hysteresis;

FIG. 7 shows a schematic circuit diagram of a circuit according to anembodiment;

FIG. 8 shows a schematic circuit diagram of a sensor according to anembodiment;

FIG. 9 shows a schematic circuit diagram of an inverter according to anembodiment;

FIG. 10 shows a schematic circuit diagram of an inverter according to anembodiment;

FIG. 11 shows a schematic circuit diagram of a memory cell and portionsof a support circuit according to an embodiment;

FIG. 12 shows a schematic diagram illustrating an operation of thememory cell according to FIG. 11;

FIG. 13 shows a schematic circuit diagram of a memory cell according toan embodiment;

FIG. 14 shows a schematic diagram illustrating an operation of thememory cell of FIG. 13; and

FIG. 15 shows a schematic cross-sectional view of a semiconductorstructure according to an embodiment.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present subject matter will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details that arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary and customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definition willbe expressly set forth in the specification in a definitional mannerthat directly and unequivocally provides the special definition for theterm or phrase.

The present disclosure provides transistors wherein a layer of astress-creating material that provides a stress that is variable inresponse to a signal acting on the stress-creating material is provided.The layer of stress-creating material may be arranged to provide astress in at least the channel region and, optionally, also in thesource region and/or the drain region of the transistor. The stressprovided by the layer of stress-creating material is variable inresponse to the signal acting on the stress-creating material. In someembodiments, the stress-creating material may include a piezoelectricmaterial and/or an electrostrictive material, wherein the stressprovided by the stress-creating material may be modified by means of anelectric field. In further embodiments, the stress-creating material mayinclude a current-strictive material, wherein the stress may be modifiedby means of an electric current flowing through the stress-creatingmaterial, or a magnetostrictive material, wherein the stress may bemodified by means of a magnetic field.

Since the mobility of charge carriers in the channel region of thetransistor and, accordingly, the conductance of the channel regionobtained in the on-state of the transistor may be influenced by a stressof the semiconductor material in the channel region of the transistor, astress-creating material as described above providing a stress that isvariable in response to a signal acting on the stress-creating materialmay allow tuning the performance of transistors after final processing.

This may provide, for example, the opportunity to improve transistormatching and, thus, the opportunity to save layout space and increasedesign freedom, as high precision matching transistors usually requirerigorous layout rules. Since a modification of the performance can, inparticular, result in a modification of the output current, it can alsobe used as an additional input to modify the electrical behavior of thetransistor (in addition to voltages applied to the source region, thedrain region, the gate electrode and the substrate on which thetransistor is formed), or for memory applications, which can, inparticular, include nonvolatile memory implementations.

In some embodiments, the stress-creating material may change stressdepending on a trigger signal and return to a previous value of thestress when the signal is removed, so that there is substantially nostress hysteresis or only a small amount of stress hysteresis. Thus, theelectrical conductivity of the channel region in the on-state of thetransistor may be controlled in accordance with the signal applied tothe stress-creating material. In other embodiments, the stress-creatingmaterial may have a stress hysteresis and stay at a modified stressvalue when the trigger signal is removed. Thus, the conductivity of thechannel region in the on-state of the transistor may be switched byapplying a signal to the stress-creating material.

The present disclosure is not limited to embodiments wherein a stressthat is variable in response to a signal acting on a layer ofstress-creating material is provided in a channel region of atransistor. In other embodiments, a stress that is variable in responseto a signal acting on a layer of stress-creating material may beprovided in a semiconductor region of a circuit element other than atransistor, for example, a semiconductor region provided in a resistor.The variable stress may modify the mobility of electrons and/or holes inthe semiconductor region, so that a substantially ohmic resistance ofthe semiconductor region is variable in response to a signal acting onthe layer of stress-creating material.

In such embodiments, the stress-creating material may have a stresshysteresis, so that the variation of the ohmic resistance induced by thesignal may be maintained at least partially after removal of the signal.In other embodiments, a stress-creating material having substantially nostress hysteresis or only a small stress hysteresis may be used forproviding an ohmic resistance that is dynamically controllable by thesignal applied to the layer of stress-creating material.

The use of such resistors instead of field effect transistors may beuseful in applications where low noise and/or high signal-to-noiseratios at low frequencies are required, since they may be lesssusceptible to flicker noise (1/f noise).

FIG. 1 a shows a schematic cross-sectional view of a semiconductorstructure 100 including a field effect transistor 102 in a stage of amethod of manufacturing the field effect transistor 102.

The semiconductor structure 100 includes a substrate 101, wherein asource region 104, a channel region 103 and a drain region 105 of thetransistor 102 are formed. A trench isolation structure 106, which maybe a shallow trench isolation structure, may provide electricalinsulation between the transistor 102 and other circuit elements in thesemiconductor structure 100 (not shown).

A gate electrode 108 is provided above the substrate 101 andelectrically insulated from the substrate 101 by a gate insulation layer107 that is provided between the channel region 103 and the gateelectrode 108. The channel region 103 is provided below the gateelectrode 108 and between the source region 104 and the drain region105.

The source region 104, the drain region 105 and the gate electrode 108may include silicide portions 109, 111, 110, respectively. Adjacent thegate electrode 108, a sidewall spacer 112 formed of, for example,silicon dioxide and a sidewall spacer 113 formed of a different materialthan the sidewall spacer 112, for example, silicon nitride, may beprovided. In some embodiments, liner layers (not shown) may be providedbetween the sidewall spacer 112 and the gate electrode 108, and betweenthe sidewall spacer 113 and the sidewall spacer 112.

The semiconductor structure 100 as shown in FIG. 1 a may be formed bymeans of known manufacturing processes which may, in particular, includeknown techniques of deposition, photolithography, etching and/oroxidation for forming the trench isolation structure 106, the gateinsulation layer 107 and the gate electrode 108. Furthermore, ionimplantation processes may be performed for introducing dopant materialsinto the channel region 103, the source region 104 and the drain region105, so that the doping of the source region 104 and the drain region105 is different from the doping of the channel region 103. Absorptionof ions by the sidewall spacer 112 and/or the sidewall spacer 113 may beused for providing desired dopant profiles in the source region 104 andthe drain region 105. The dopant profiles may, in particular, include asource extension region and a drain extension region, which are providedadjacent the channel region 103 and have a shallower depth than the restof the source region 104 and the drain region 105, respectively, asshown in FIG. 1 a.

The silicide portions 109, 110, 111 in the source region 104, the gateelectrode 108 and the drain region 105 may improve the electricalconductivities of the source region 104, the gate electrode 108 and thedrain region 105, respectively. The silicide portions 109, 110, 111 maybe formed by depositing a metal layer, for example a layer of nickel,platinum and/or tungsten, over the semiconductor structure 100 andinitiating a chemical reaction between the metal and the semiconductormaterial in the source region 104, the gate electrode 108 and the drainregion 105, for example by thermal activation. Unreacted metal may beremoved by means of an etch process.

The present disclosure is not limited to embodiments wherein the sourceregion 104, the channel region 103 and the drain region 105 are formedin a bulk semiconductor substrate 101, as shown in FIG. 1 a. In otherembodiments, a semiconductor-on-insulator (SOI) configuration may beemployed, wherein the source region 104, the channel region 103 and thedrain region 105 are formed in a semiconductor layer that is separatedfrom a substrate wafer by a layer of an electrically insulating materialwhich may, for example, include silicon dioxide.

FIG. 1 b shows a schematic cross-sectional view of the semiconductorstructure 100 in a later stage of the manufacturing process. After theformation of the source region 104, the drain region 105 and thesilicide portions 109, 110, 111, the sidewall spacer 113 may beselectively removed. In some embodiments, this may be done by means of areactive ion etch (RIE) process adapted for selectively etching thematerial of the sidewall spacer 113 relative to the material of thesidewall spacer 112. In the selective etching of a first materialrelative to a second material, an etch rate of the first material isgreater than an etch rate of the second material, so that the firstmaterial is more quickly removed than the second material.

Reactive ion etching is a dry etch process, wherein ions and radicalsare provided by an electric glow discharge that is created in a reactantgas. On the surface of the semiconductor structure 100, chemicalreactions between materials of the semiconductor structure 100 and theions and/or radicals may occur. Additionally, the surface of thesemiconductor structure 100 may be bombarded with energetic ions, whichmay cause a sputtering of the surface. Due to the chemical reactions,and due to the sputtering, material may be removed from the surface ofthe semiconductor structure 100.

The selectivity of the reactive ion etch process may be obtained by anappropriate selection of the reactant gas and by an adaptation ofparameters, such as the pressure of the reactant gas and the power ofthe electric discharge. For selectively removing the sidewall spacer113, the reactive ion etch process may be adapted such that the materialof the sidewall spacer 113, which may, for example, be silicon nitride,is removed at a greater etch rate than other materials of thesemiconductor structure 100.

The present disclosure is not limited to embodiments wherein thesidewall spacer 113 is completely removed, as shown in FIG. 1 b. Inother embodiments, the size of the sidewall spacer 113 may be reduced,and portions of the sidewall spacer 113 may remain on the semiconductorstructure 100. In further embodiments, the sidewall spacer 113 mayremain in the semiconductor structure 100.

Removing the sidewall spacer 113 completely or partially, as describedabove, may help to provide a smaller distance between a layer ofstress-creating material whose formation will be described below, andthe channel region 103, which may help to more efficiently provide astress created by the layer of stress-creating material in the channelregion 103.

An electrically insulating layer 114 may be formed over thesemiconductor structure 100. The electrically insulating layer 114 mayinclude a dielectric material such as, for example, silicon dioxide,silicon oxynitride and/or silicon nitride, and may be formed by means ofdeposition techniques such as chemical vapor deposition and/or plasmaenhanced chemical vapor deposition.

A bottom stress-control electrode 115 may be formed on the electricallyinsulating layer 114. The bottom stress-control electrode 115 mayinclude an electrically conductive material, for example, titaniumnitride (TiN) or a metal such as tungsten (W), gold (Au), chromium (Cr),aluminum (Al). Methods for forming the bottom stress-control electrode115 when including a metal may include techniques of physical vapordeposition, such as sputtering or pulsed laser deposition, and/orchemical deposition techniques, such as chemical vapor deposition and/orplasma-enhanced chemical vapor deposition.

In other embodiments, the bottom stress-control electrode 115 mayinclude an electrically conductive oxide, such as lanthanum strontiumcobalt oxide (La_(0.5)Sr_(0.5)CoO₃), abbreviated as LSCO. In suchembodiments, the bottom stress-control electrode 115 may be formed bymeans of pulsed laser deposition, for example at a temperature of 575°C., under 150 mTorr of oxygen partial pressure at a laser fluence ofabout 2 J/cm², as disclosed, for example, in Wang et. al., “Compositioncontrol and electrical properties of PMN-PT thin films around themorphotropic boundary,” Applied Physics A—Materials Science &Processing, 79:551-56 (2004), the disclosure of which is incorporatedherein by reference.

In further embodiments, the bottom stress-control electrode 115 mayinclude a silicide. In such embodiments, the formation of the bottomstress-control electrode 115 may include depositing a layer ofpolysilicon by means of chemical vapor deposition and/or plasma enhancedchemical vapor deposition and depositing a layer of a metal, forexample, nickel, platinum and/or tungsten, on the polysilicon layer, forexample by means of sputtering, and initiating a chemical reactionbetween the metal and the polysilicon, for example by means of anannealing process. Thereafter, unreacted metal may be removed by meansof an etch process.

A layer 116 of a stress-creating material may be deposited over thebottom stress-control electrode 115. The stress-creating material 116provides a stress that is variable in response to a signal acting on thestress-creating material.

The stress-creating material 116 may include an electrostrictivematerial. When a signal provided in the form of an electric field actson an electrostrictive material, a deformation of the electrostrictivematerial that depends on the strength of the electric field may beobtained. The deformation may be associated with a stress in the layer116 of stress-creating material, which may be approximately proportionalto a square of the strength of the electric field. In some embodimentswherein the layer 116 of stress-creating material includes anelectrostrictive material, the layer 116 of stress-creating material mayinclude a lead magnesium niobate (Pb(Mg_(1/3)Nb_(2/3))O₃), abbreviatedas PMN, based ceramic material. PMN may have a relatively small stresshysteresis or substantially no stress hysteresis (see, for example,Uchino, “Recent developments in Ceramic Actuators,” 1996 Symposium onSmart Materials, Structures and MEMS, SPIE Vol. 3321 (1998), thedisclosure of which is incorporated herein by reference). Methods offorming the layer 116 of stress-creating material when including PMN mayinclude pulsed laser deposition.

In some embodiments, the pulsed laser deposition of PMN may be performedas disclosed in Verardi et. al., “Influence of PZT template layer onpulsed laser deposited Pb(Mg_(1/3)Nb_(2/3))O₃ thin films,” AppliedSurface Science, 168:340-44 (2000), the disclosure of which isincorporated herein by reference. In particular, the pulsed laserdeposition process may be performed at a temperature of about 500° C. inan ambient comprising oxygen at a pressure of about 0.2 mbar at a laserfluence of about 25 J/cm² for a time of about 90 min. Thereafter, thesemiconductor structure may be cooled down under an oxygen pressure ofabout 800 mbar. The laser may be a Nd-YAG laser operating at 1064 nmwith a repetition rate of about 10 Hz. In some embodiments, a templatelayer comprising Pb(Zr_(x)Ti_(1-x))O₃ (PZT), where x may be about 0.53may be provided below the PNM layer. The deposition of PTZ may beperformed for about 40 min at a temperature of about 400° C. at anoxygen pressure of about 0.2 mbar. Thereafter, a cooling at an oxygenpressure of about 0.2 mbar may be performed.

In other embodiments, other parameters of the deposition process may beused, and suitable parameters may be determined by means of routineexperiments. Moreover, the PZT template layer may be omitted.

In further embodiments, the layer 116 of stress-creating material mayinclude a piezoelectric material. When a signal provided in the form ofan electric field is applied to a piezoelectric material, a deformationand/or a stress of the piezoelectric material may be obtained due to theinverse piezoelectric effect. The stress obtained by the inversepiezoelectric effect may be approximately proportional to the strengthof the electric field applied to the piezoelectric material. Examples ofpiezoelectric materials may include piezoceramic material, such as leadzirconate titanate, PZT, (Pb(Zr_(x)Ti_(1-x))O₃, wherein x may be in arange from about 0 to about 1, in particular in the range from about 0.4to about 0.6, for example about 0.5) or lanthanum doped lead zirconatetitanate (PLZT) compounds such as, for example,Pb_(0.83)La_(0.17)(Zr_(0.3)Ti_(0.7))_(0.9575)O₃ (PLZT 17/30/70). Methodsfor forming the layer 116 of stress-creating material when including PZTor PLZT may include pulsed laser deposition. In some embodiments,parameters of the pulsed laser deposition process may correspond tothose employed in the formation of the PZT template layer describedabove.

In further embodiments, the layer 116 of stress-creating material mayinclude a material having a stress hysteresis, wherein at least aportion of the stress provided in response to the signal, which may beprovided in form of an electric field, is maintained after removal ofthe signal. In such embodiments, the stress-creating material of thelayer 116 may include a relaxor ferroelectric, for example[Pb(Zn_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x), wherein x may be greaterthan 0 and less than about 0.1 (PZN-PT) and/or[Pb(Mg_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x), wherein x may be greaterthan 0 and less than about 0.5, in particular greater than 0.3 and lessthan about 0.4, for example about 0.32, about 0.35 or about 0.4(PMN-PT).

In embodiments wherein the layer 116 of stress-creating materialincludes PMN-PT, formation of the layer 116 of stress-creating materialmay include a pulsed laser deposition process, for example, a pulsedlaser deposition process as described in Wang et al., “Compositioncontrol and electrical properties of PMN-PT thin films around themorphotropic boundary,” Applied Physics A—Materials Science &Processing, 79:55156 (2004), the disclosure of which is incorporatedherein by reference.

In particular, in embodiments wherein the layer 116 of stress-creatingmaterial includes PMN-PT, a PMN-PT target may be fabricated, wherein theparameter x defining the amount of PbTiO₃ as compared to the amount ofPb(Mg_(1/3)Nb_(2/3))O₃ is selected in accordance with the desiredcomposition of the layer 116 of stress created material, and whereinexcessive amounts of Pb and Mg may be provided in order to take lossescaused by re-evaporation during the pulsed laser deposition process intoaccount. For example, a 40 percent (atomic) excessive amount of Pb and a35 percent (atomic) excess of Mg may be provided.

Using the above-described PMN-PT target, a pulsed laser depositionprocess may be performed. The pulsed laser deposition process may beperformed at a temperature in a range from about 550-650° C., forexample at a temperature of about 600° C., in an oxygen ambient having apressure of about 200 mTorr. A laser fluence in a range from about1.5-2.5 J/cm², for example a laser fluence of about 2 J/cm², may beemployed. The deposition time may be about 20 minutes for a 500 nm thickPMN-PT layer, and shorter or longer deposition times may be employedwhen a smaller or greater thickness of the layer 116 of stress-creatingmaterial is to be provided.

After the deposition of the layer 116 of stress-creating material, apost annealing may be carried out, wherein the temperature may bereduced to a temperature in a range from about 450-550° C., for exampleabout 500° C., while the oxygen pressure is increased to about 1 bar.

In other embodiments, different parameters of the deposition process maybe employed, wherein suitable values of the parameters may be determinedby means of routine experimentation.

Similar deposition processes may be used for forming the layer 116 ofstress-creating material when including other materials, such as, forexample, PZN-PT.

In further embodiments, the layer 116 of stress-creating material maycomprise a current-strictive material providing a stress that depends onan amperage of a current flowing through the layer 116, for examplemay-valley semiconductors such as germanium.

After the formation of the layer 116 of stress-creating material, a topstress-control electrode 117 may be formed. Materials of the topstress-control electrode 117, and techniques employed in the formationof the top stress-control electrode 117, may include the materials andtechniques used for the bottom stress-control electrode 115. Thematerial of the top stress-control electrode 117 need not be identicalto the material of the bottom stress electrode 115. For example, in oneembodiment, the bottom stress-control electrode 115 may includelanthanum strontium cobalt oxide, and the top stress-control electrode117 may include tungsten, titanium nitride, gold and/or chromium. Inother embodiments, both the top stress-control electrode 117 and thebottom stress-control electrode 115 may include titanium nitride, ametal, for example tungsten, or any of the other metals mentioned above,or a silicide as described above, wherein the top stress-controlelectrode 117 may be formed of substantially the same material as thebottom stress-control electrode 115.

FIG. 1 c shows a schematic cross-sectional view of the semiconductorstructure 100 in a later stage of the manufacturing process. After theformation of the top stress-control electrode 117, an etch process maybe performed for removing portions of the bottom stress-controlelectrode 115, the layer 116 of stress-creating material and the topstress-control electrode 117. Optionally, portions of the electricallyinsulating layer 114 may also be removed.

In the etch process, portions of the bottom stress-control electrode115, the layer 116 of stress-creating material and the topstress-control electrode 117 and, optionally, the electricallyinsulating layer 114, above a portion of the source region 104, aportion of the drain region 105 and/or the trench isolation structure106 may be removed to expose portions of the source region 104 and thedrain region 105, in particular portions of the silicide portions 109,111 in the source region 104 and the drain region 105, respectively.Portions of the electrically insulating layer 114, the bottomstress-control electrode 115, the layer 116 of stress-creating materialand the top stress-control electrode 117 adjacent the gate electrode 108and above the gate electrode 108 may remain in the semiconductorstructure 100.

For removing the portions of the bottom stress-control electrode 115,the layer 116 of stress-creating material, the top stress-controlelectrode 117 and, optionally, the electrically insulating layer 114,techniques of photolithography and etching may be employed. Inparticular, a mask covering portions of the semiconductor structure 100with the exception of those portions from which the bottomstress-control electrode 115, the layer 116 of stress-creating material,the top stress-control electrode 117 and, optionally, the electricallyinsulating layer 114 are to be removed may be formed by means ofphotolithography. Thereafter, an etch process, for example a dry etchprocess and/or a reactive ion etch process, may be performed forremoving those portions of the electrically insulating layer 114, thebottom stress-control electrode 115, the layer 116 of stress-creatingmaterial and the top stress-control electrode 117 which are not coveredby the mask. In some embodiments, the etch process may be a deepreactive ion etch process using an inductively coupled plasma reactiveion etch system as described in Agnus et. al., “Dry Etching of SingleCrystal PMN-PT Piezoelectric Material,” published in 24^(th)International Conference on Micro Electro Mechanical Systems, MEMS'11,Cancun, Mexico, 2011, the disclosure of which is incorporated herein byreference. In particular, a mask comprising nickel on a chromium buffermay be used. The etch process may be performed in an etch gas comprisingAr (about 92%) and C₄F₈ (about 8%) at a temperature in a range fromabout −20° C. to about 60° C., a bias power in a range from about100-500 W, an RF source power in a range from about 500-1200 W and apressure in a range from about 2-15 mTorr. The duration of the etchprocess may be selected in accordance with the thickness of the materialto be removed. In other embodiments, other parameters of the etchprocess may be used, and suitable parameters may be determined by meansof routine experiments.

Thereafter, a dielectric material 118 may be deposited over thesemiconductor structure 100, and a planarization process may beperformed for obtaining a substantially planar surface of the dielectricmaterial 118.

The dielectric material 118 may include silicon dioxide, siliconoxynitride and/or silicon nitride and may be deposited by means oftechniques of chemical vapor deposition and/or plasma enhanced chemicalvapor deposition. The planarization of the dielectric material 118 mayinclude chemical mechanical polishing, wherein the semiconductorstructure 100 is moved relative to a polishing pad, and a slurry isapplied to an interface between the semiconductor structure 100 and thepolishing pad. Portions of the dielectric material 118 may be removeddue to chemical reactions between the slurry and the dielectric material118 and/or by mechanical abrasion.

FIGS. 1 d and 1 e show schematic cross-sectional views of thesemiconductor structure 100 in a later stage of the manufacturingprocess. FIG. 1 d shows a cross-section along the same plane as FIGS. 1a-1 c, and FIG. 1 e shows a cross-section along a plane that isperpendicular to the plane of drawing of FIG. 1 d and runs through theline 130 shown in FIG. 1 d. Hence, FIG. 1 d shows a cross-section alongthe length direction of the transistor 102, and FIG. 1 e shows across-section along the width direction of the transistor 102 throughthe center of the gate electrode 108.

A source contact via 119, a gate contact via 120, a drain contact via121 and stress-control contact vias 122, 123 may be formed in thedielectric material 118. Contact vias 119, 120, 121, 122, 123 may beformed by means of known techniques for forming contact vias in adielectric material, including photolithography and an anisotropic dryetch process.

The source contact via 119 extends through the dielectric material 118to the silicide portion 109 in the source region 104. The gate contactvia 120 extends through the dielectric material 118, the topstress-control electrode 117, the layer 116 of stress-creating material,the bottom stress-control electrode 115 and the electrically insulatinglayer 114 to the silicide portion 110 in the gate electrode 108. Thedrain contact via 121 extends through the dielectric material 118 to thesilicide portion 111 in the drain region 105. The stress-control contactvia 122 extends through the dielectric material 118, the topstress-control electrode 117 and the layer 116 of stress-creatingmaterial to the bottom stress-control electrode 115. The stress-controlcontact via 123 extends through the dielectric material 118 to the topstress-control electrode 117.

After the formation of the contact vias 119 to 123, a liner layer 124may be formed at the sidewalls of the contact vias 119 to 123. The linerlayer 124 may include an electrically insulating material, for examplesilicon dioxide, silicon oxynitride and/or silicon nitride, and may beformed by substantially isotropically depositing the material of theliner layer 124 over the semiconductor structure 100 and performing ananisotropic etch process for substantially removing portions of theliner layer 124 from the bottom of the contact vias 119 to 123 and,optionally, the top surface of the dielectric material 118.

The liner layer 124 may help to prevent an electric contact between agate contact 126 formed in the gate contact via 120 and thestress-control electrodes 115, 117 and may help to prevent an electriccontact between a stress-control contact 128 formed in thestress-control contact via 122 and the top stress-control electrode 117.The formation of the gate contact 126, the stress-control contact 128and further contacts will be described in the following.

After the formation of the liner layer 124, the contact vias 119 to 123may be filled with an electrically conductive material, for example, ametal such as tungsten. For this purpose, the electrically conductivematerial may be deposited by means of known deposition techniques, andportions of the electrically conductive material outside the contactvias 119 to 123 may be removed, for example, by means of a chemicalmechanical polishing process.

The electrically conductive material in the source contact via 119provides a source contact 125 for electrically connecting the sourceregion 104 with other circuit elements in the semiconductor structure100. The electrically conductive material in the gate contact via 120provides the gate contact 126 for electrically connecting the gateelectrode 108 with other circuit elements in the semiconductor structure100, and the electrically conductive material in the drain contact via121 provides a drain contact 127 for electrically connecting the drainregion 105 with other circuit elements in the semiconductor structure100.

The electrically conductive material in the stress-control contact via122 provides the stress-control contact 128 for electrically connectingthe bottom stress-control electrode 115 with other circuit elements inthe semiconductor structure 100. The electrically conductive material inthe stress-control contact via 123 provides a stress-control contact 129for electrically connecting the top stress-control electrode 117 withother circuit elements in the semiconductor structure 100.

Thereafter, further electrical contact layers (not shown) includinginterlayer dielectric materials as well as contact vias and trenchesfilled with an electrically conductive material may be formed forcompleting the semiconductor structure 100.

In some embodiments, a poling process may be performed after thecompletion of the semiconductor structure 100 for creating aferroelectric polarization of the stress-creating material in the layer116. For this purpose, an electric voltage may be applied between thestress-control contacts 128, 129. Thus, an electric field is createdbetween the bottom stress-control electrode 115 and the topstress-control electrode 117. Due to the application of the electricfield to the layer 116 of stress-creating material, the ferroelectricpolarization of the stress-creating material may align to the electricfield. In particular, in embodiments wherein the layer 116 ofstress-creating material includes a polycrystalline ferroelectricpiezoceramic material, poling the layer 116 of stress-creating materialmay help to obtain or increase piezoelectric properties of the layer 116of stress-creating material.

FIG. 2 shows a circuit symbol which will be used in the following incircuit diagrams of circuits including transistors similar to thetransistor 102 described above with reference to FIGS. 1 a-1 e.

In the circuit symbol of FIG. 2, the source contact 125, the sourceregion 104, the channel region 103, the drain region 105, the draincontact 127, the gate electrode 108 and the gate contact 126 are shownin accordance with conventional circuit symbols for field effecttransistors. Additionally, dashed lines are drawn to denote thestress-control contact 128 electrically connected to the bottomstress-control electrode 115 and the stress-control contact 129connected to the top stress-control electrode 117.

In accordance with conventional circuit symbols for field effecttransistors, arrows at the source region 104 (not shown in FIG. 2) maybe used for distinguishing P-channel transistors and N-channeltransistors, wherein the arrow points from the channel region 103 to thesource contact 125 in N-channel transistors, and the arrow points fromthe source contact 125 to the channel region 103 in P-channeltransistors.

FIGS. 3 a and 3 b show schematic cross-sectional views of asemiconductor structure 300 according to another embodiment. FIG. 3 bshows a cross-sectional view along a plane that is perpendicular to theplane of drawing of FIG. 3 a and runs through the dashed line 330 shownin FIG. 3 a. The cross-sectional view shown in FIG. 3 a is along a planethat is perpendicular to the plane of drawing of FIG. 3 b and runsthrough the dashed line 331 shown in FIG. 3 b.

The semiconductor structure 300 includes a field effect transistor 302,wherein the cross-section shown in FIG. 3 a is along the lengthdirection of the transistor 302, and the cross-section of FIG. 3 b isalong the width direction of the transistor 302.

Some features of the semiconductor structure 300 may correspond tofeatures of the semiconductor structure 100 described above withreference to FIGS. 1 a-1 e. For convenience, in FIGS. 3 a and 3 b on theone hand, and FIGS. 1 a-1 e on the other hand, like reference numeralshave been used to denote like components, and features of components ofthe semiconductor structure 300 may correspond to features of componentsof the semiconductor structure 100 denoted by like reference numerals.

The semiconductor structure 300 includes a substrate 101 wherein asource region 104, a channel region 103 and a drain region 105 of thetransistor 302 are formed. A trench isolation structure 106 provideselectrical insulation between the transistor 302 and other circuitelements in the semiconductor structure 300. A gate electrode 108 isformed above the substrate 101 and electrically insulated therefrom by agate insulation layer 107. In the source region 104, the gate electrode108 and the drain region 105, silicide portions 109, 110, and 111,respectively, may be provided.

Adjacent the gate electrode 108, a sidewall spacer 112 may be provided.In the formation of the source region 104 and the drain region 105, anadditional sidewall spacer formed of another material than the sidewallspacer 112 (not shown), similar to the sidewall spacer 113 describedabove with reference to FIG. 1 a, may be employed. The additionalsidewall spacer may later be removed, completely or partially, by meansof an etch process, as described above.

A layer 316 of stress-creating material may be formed over the sourceregion 104, the gate electrode 108 and the drain region 105. The layer316 of stress-creating material may be formed directly on the sourceregion 104, the gate electrode 108, the silicon dioxide sidewall spacer112 and the drain region 105, as shown in FIG. 3 a, or a relatively thinlayer of an electrically insulating material (not shown) similar to thelayer 114 described above may be formed below the layer 316 ofstress-creating material for providing electrical insulation between thelayer 316 of stress-creating material and the source region 104, thegate electrode 108 and the drain region 105. The layer of electricallyinsulating material may, for example, include silicon dioxide, siliconoxynitride and/or silicon nitride and may be formed by means oftechniques of chemical vapor deposition or plasma enhanced chemicalvapor deposition.

On the layer 316 of stress-creating material, a top stress-controlledelectrode 317 may be formed.

Features of the layer 316 of stress-creating material may correspond tothose of the layer 116 of stress-creating material described above withreference to FIGS. 1 a-1 e. In particular, the layer 316 ofstress-creating material may include an electrostrictive,current-strictive or piezoelectric material. The top stress-controlelectrode 317 may have features corresponding to those of the topstress-control electrode 117 described above with reference to FIGS. 1a-1 e.

For forming the layer 316 of stress-creating material and the topstress-control electrode 317, techniques corresponding to those used inthe formation of the layer 116 of stress-creating material and the topstress-control electrode 117 as described above may be employed.

In the embodiments of FIGS. 3 a and 3 b, the bottom stress-controlelectrode 115 provided in the embodiments of FIG. 1 a-1 e may beomitted. An electric field acting on the layer 316 of stress-creatingmaterial may be provided by applying a voltage between the gateelectrode 108 and the top stress-control electrode 317.

Above the top stress-control electrode 317, a layer 118 of dielectricmaterial may be formed and may be planarized, for example, by means of achemical mechanical polishing process. In the layer 118 of dielectricmaterial, a source contact via 119, a gate contact via 120, a draincontact via 121 and a stress-control contact via 122 may be formed.

In the source contact via 119, a source contact 125 may be formed. Inthe gate contact via 120, a gate contact 126 may be provided. In thedrain contact via 121, a drain contact 127 may be provided, and astress-control contact 128 may be provided in the stress control contactvia 122. On sidewalls of the source contact via 119, the gate contactvia 120, the drain contact via 121 and the stress-control contact via122, a liner layer 124 of an electrically insulating material may beformed.

The layer 316 of stress-creating material and the top stress-controlelectrode 317 may extend over substantially the entire field effecttransistor 302, as shown in FIGS. 3 a and 3 b. In other embodiments, anetch process may be performed for removing portions of the layer 316 ofstress-creating material and the top stress-control electrode 317 overportions of the source region 104, portions of the drain region 105 andthe trench isolation structure 106, similar to the etching of layers115, 116, 117 in the embodiments of FIGS. 1 a-1 e. In such embodiments,in the completed field effect transistor 302, the layer 316 ofstress-creating material and the top stress-control electrode 317 mayextend over the top surface and side surfaces of the gate electrode 108and portions of the source region 104 and the drain region 105 adjacentthe gate electrode 108, similar to the layer 116 of stress-creatingmaterial and the top stress-control electrode 117 shown in FIG. 1 d.

In the field effect transistor 302, a stress in the channel region 103may be controlled by applying an electric field to the layer 316 ofstress-creating material. This can be done by applying differentelectrical voltages to the gate contact 126 and the stress-controlcontact 128, so that an electric voltage is applied between the gateelectrode 108 and the top stress-control electrode 317.

Similar to the embodiments described above with reference to FIGS. 1 a-1e, after the formation of the field effect transistor 302, a poling ofthe layer 316 of stress-creating material may be performed. This may bedone by applying a voltage between the gate contact 126 and thestress-control contact 128 that is adapted for providing an electricfield in the layer 316 of stress-creating material that is sufficient toprovide a ferroelectric polarization of the layer 316 of stress-creatingmaterial.

FIG. 4 shows a schematic circuit symbol that can be used in circuitdiagrams of circuits including transistors having features correspondingto those of the transistor 302. In the circuit symbol, the sourcecontact 125, the source region 104, the channel region 103, the drainregion 105, the drain contact 127, the gate electrode 108 and the gatecontact 126 are shown in accordance with conventional circuit symbolsfor field effect transistors. Additionally, the stress-control contact128 is denoted by a dashed line. Similar to conventional circuit symbolsfor field effect transistors, an arrow at the line denoting the sourceregion (not shown in FIG. 4) may be drawn, wherein the direction of thearrow may be used for distinguishing between N-channel transistors andP-channel transistors.

The present disclosure is not limited to embodiments wherein a layer116, 316 of stress-creating material provides a stress that is variablein response to an electric field or current acting on thestress-creating material, as described above. In other embodiments, thestress-creating material may include a magnetostrictive materialproviding a stress that is variable in response to a magnetic fieldacting on the stress-creating material. In such embodiments, the layerof stress-creating material may include a ferromagnetic material, forexample a metal such as iron, nickel or cobalt, an alloy, for example analloy of terbium and iron such as TbFe₂, or an alloy of terbium,dysprosium and iron, for example Tb_(0.3)Dy_(0.7)Fe₂, which is alsodenoted as “Terfenol-D.” Techniques for forming a layer of astress-creating material including a magnetostrictive material asdescribed above include sputtering and pulsed laser deposition.

Transistors including a layer of a stress-creating material including amagnetostrictive material may have a configuration as described abovewith reference to FIGS. 1 a-1 e, 3 a and 3 b, wherein, however, nostress-control electrodes, such as stress-control electrodes 115, 117and 317, and no stress-control contacts, such as stress-control contacts128, 129, need to be provided. Instead, layers of electricallyinsulating material may be provided above and/or below the layer ofmagnetostrictive material for providing electrical insulation betweenthe layer of magnetostrictive material and other components of thesemiconductor structure, in particular between the layer ofmagnetostrictive material and the source region, the gate electrode andthe drain electrode of the transistor. Such electrically insulatinglayers may help to prevent electrical shortcuts caused by the layer ofmagnetostrictive material, in particular in embodiments wherein themagnetostrictive material is electrically conductive.

FIG. 5 shows a schematic diagram illustrating a dependency of an outputcurrent of an N-channel transistor which may have a configurationcorresponding to that of transistor 102 described above with referenceto FIGS. 1 a-1 e or a configuration corresponding to that of transistor302 described above with reference to FIGS. 3 a and 3 b on adrain/source voltage applied between the drain region 105 and the sourceregion 104 of the transistor when a fixed gate voltage is appliedbetween the source region 104 and the gate electrode 108.

A horizontal coordinate axis 501 denotes the drain/source voltage, and avertical coordinate axis 502 denotes the output current. A curve 503schematically illustrates the dependence of the output current on thedrain/source voltage in the absence of stress in the channel region 103.The output current increases with an increasing positive drain/sourcevoltage, wherein a relatively steep increase is obtained at relativelysmall drain/source voltages, and a smaller slope is obtained atrelatively large drain/source voltages.

Curve 504 schematically illustrates the dependency of the output currenton the drain/source voltage in the presence of a tensile stress in thechannel region 103. The tensile stress may increase the mobility ofelectrons in the channel region 103, so that a greater output current isobtained. Curve 505 schematically illustrates the dependency of theoutput current on the drain/source voltage in the presence of acompressive stress in the channel region 103. The compressive stress mayreduce the mobility of electrons in the channel region 103, so that asmaller output current is obtained.

The output current also depends on the gate voltage that is appliedbetween the gate electrode 108 and the source region 104 of thetransistor. In the case of an N-channel transistor, the output currentincreases with increasing gate voltage, corresponding to the switchingof the transistor from the off-state to the on-state. An N-channel fieldeffect transistor may be in the off-state when a relatively small gatevoltage is applied, and may be in the on-state when a relatively highgate voltage is applied.

In the case of P-channel transistors, typically a negative voltage isapplied between the drain region 105 and the source region 104 of thetransistor, so that the source region 104 is at a greater electricpotential than the drain region 105. Moreover, in a P-channeltransistor, the output current depends on the mobility of holes in thechannel region 103. The mobility of holes may increase when acompressive stress is applied to the channel region 103, and themobility of holes may be reduced when a tensile stress is applied to thechannel region 103. Thus, in a P-channel transistor, a tensile stress inthe channel region 103 may reduce the output current, and a compressivestress in the channel region may increase the output current of thetransistor.

Moreover, in the case of a P-channel transistor, an increase of the gatevoltage applied between the gate electrode and the source electrode ofthe transistor may reduce the output current of the transistor,corresponding to the switching of the transistor from the on-state tothe off-state. A P-channel transistor may be in the on-state when arelatively low gate voltage is applied, and it may be in the off-statewhen a relatively high gate voltage is applied.

In transistors including a layer of a stress-creating material asdescribed above with reference to FIGS. 1 a-1 e and FIGS. 3 a-3 b, thestress in the channel region 103 of the transistor provided by the layerof stress-creating material may be varied in such a manner that itsupports the operation of the transistor. In particular, in an N-channeltransistor, a relatively strong tensile stress in the channel region 103may be provided when the transistor is in the on-state, so that arelatively high output current is obtained in the on-state, and asmaller tensile stress, substantially no stress or a compressive stressmay be provided in the channel region 103 when the transistor is in theoff-state.

In a P-channel transistor, a relatively strong compressive stress in thechannel region 103 may be provided when the transistor is in theon-state, and a smaller compressive stress, substantially no stress or atensile stress in the channel region 103 may be provided when thetransistor is in the off-state.

In the transistor 102 described above with reference to FIGS. 1 a-1 e,the operation of the transistor 102 may be supported by controlling avoltage applied between the stress-control contacts 128, 129. When thegate voltage of the transistor 102 is changed for switching thetransistor 102 between the on-state and the off-state, the voltageapplied between the stress-control contacts 128, 129 may also be changedfor changing the stress in the channel region 103 of the transistor 102.

In the transistor 302 described above with reference to FIGS. 3 a and 3b, the operation of the transistor 302 may be supported by varying avoltage applied between the gate electrode 108 and the topstress-control electrode 317. Since, when the transistor 302 is switchedbetween the off-state and the on-state, the voltage applied to the gateelectrode 108 is changed, the electric field acting on the layer 316 ofstress-creating material in the vicinity of the channel region 103 ofthe transistor 302 can change, even if the top stress-control electrode317 is maintained at substantially the same voltage. Thus, in thetransistor 302, a variation of the stress in the channel region 103 ofthe transistor 302 may be obtained when the transistor 302 is switchedbetween the on-state and the off-state, even if the top stress-controlelectrode 317 is maintained at a substantially constant bias voltage oris connected to ground.

The strength of the electric field applied to the layer 116 ofstress-creating material in the transistor 102, which depends on thevoltage applied between the bottom stress-control electrode 115 and thetop stress-control electrode 117 in the transistor 102, as well as thestrength of the electric field in the layer 316 of stress-creatingmaterial, that depends on the voltage between the gate electrode 108 andthe top stress-control electrode 317 in the transistor 302, may beselected in accordance with properties of the materials of the layer 116of stress-creating material and the layer 316 of stress-creatingmaterial, respectively, and in accordance with the desired stress to beprovided in the channel region 103 of the transistor.

In some embodiments, the stress-creating material may be a material thathas substantially no stress hysteresis or provides only a small amountof stress hysteresis. Thus, the stress provided in the channel region103 of the transistor may be substantially independent of the history ofoperation of the transistor. Thus, the stress in the channel region 103may be provided in accordance with the current state of the transistorin a convenient manner for supporting the operation of the transistor,for example, for improving the switching speed of the transistor.

In other embodiments, a stress-creating material having a stresshysteresis may be provided in the layer 116 of stress-creating materialof the transistor 102 described above with reference to FIGS. 1 a-1 e,or in the layer 316 of stress-creating material of the transistor 302described above with reference to FIGS. 3 a and 3 b.

FIG. 6 shows a schematic diagram 600 illustrating a stress hysteresis. Ahorizontal coordinate axis 601 denotes a strength of an electric fieldapplied to a stress-creating material having a stress hysteresis suchas, for example, PMN-PT, and a vertical coordinate axis 602 denotes astress provided by the layer of stress-creating material, which may alsobe associated with a strain (deformation) of the layer ofstress-creating material.

In the diagram 600, negative and positive values of the electric fieldare used to denote a direction of the electric field. Negative values ofthe electric field correspond to an electric field whose field linesextend in a first direction, and positive values of the electric fieldcorrespond to an electric field whose field lines extend in a seconddirection that is opposite to the first direction.

If a relatively strong negative electric field is applied to the layerof stress-creating material as, for example at point 608, a relativelystrong negative or compressive, respectively, stress may be obtained.If, starting from the relatively strong negative electric field, theabsolute value of the electric field is reduced, the stress provided bythe layer of stress-creating material may vary in accordance with thebranch 604 of the curve 603. In particular, when the electric field isapproximately zero, a residual stress 607 of the layer ofstress-creating material may be obtained.

When a positive electric field is applied thereafter, a weakercompressive stress of the layer of stress-creating material may beobtained. At a relatively high positive value of the electric field as,for example, at point 609, a relatively weak compressive stress orsubstantially no compressive stress at all may be obtained.

If, starting from point 609, the strength of the electric field isreduced, the stress of the layer of stress-creating material may vary inaccordance with the branch 605 of the curve 603. In particular, if,starting from a relatively strong positive value of the electric field,the strength of the electric field is reduced to substantially zero, arelatively weak residual compressive stress 606 may be obtained.Starting from the relatively weak residual compressive stress 606, asubstantial compressive stress of the layer of stress-creating materialmay be obtained by applying a relatively strong negative electric field.

Accordingly, the stress provided by the layer of stress-creatingmaterial may depend on the history of the electric field applied to thelayer of stress-creating material. As shown in FIG. 6, a differentresidual stress 606 or 607, respectively, may be obtained, depending onwhether a positive or negative electric field has been applied to thelayer of stress-creating material, even when the electric field is nolonger applied. Moreover, the particular value of the residual strainmay depend on the specific positive or negative value of the electricfield that has been applied.

Hence, providing a layer of a stress-creating material having a stresshysteresis may allow varying the stress provided by the stress-creatingmaterial by applying an electric field to the layer of stress-creatingmaterial, and the stress provided by the layer of stress-creatingmaterial may be maintained at least partially when the electric field isno longer applied.

The curve 603 illustrating the dependence of the stress provided by thelayer of stress-creating material on the electric field applied to thelayer of stress-creating material need not have a shape as shown in FIG.6. For example, the stress provided by the layer of stress-creatingmaterial, if a relatively strong positive electric field is applied,need not be approximately zero. In other embodiments, a relativelystrong positive or tensile stress may be provided when a relativelystrong positive electric field is applied. In such embodiments, thestress obtained in the presence of a relatively strong negative electricfield may be negative or approximately zero. In further embodiments, arelatively strong positive or tensile stress may be provided when arelatively strong negative electric field is applied, and a negative orcompressive, respectively, stress may be obtained if a positive electricfield is applied, or a substantially zero stress may be obtained when apositive electric field is applied.

The particular dependency of the stress provided by the layer ofstress-creating material may depend on the material from which the layerof stress-creating material is formed, as well as on parameters of thedeposition process, and on the poling of the layer of stress-creatingmaterial, in particular on the direction of the electric field that isapplied when the layer of stress-creating material is poled, see, forexample, Wu et. al., “Domain engineered switchable strain states inferroelectric (011) [Pb(Mg_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x)(PMN-PT, x≈0.32) single crystals,” J. Appl. Phys., 109:124101, 2011, thedisclosure of which is incorporated herein by reference.

In the following, embodiments of circuits including transistorsincluding a layer of stress-creating material will be described.

FIG. 7 shows a schematic circuit diagram of a circuit 700 according toan embodiment. The circuit 700 includes a current mirror circuit 701.The current mirror circuit 701 includes a transistor 702 and atransistor 703, which may, in some embodiments, be N-channel fieldeffect transistors. The transistor 702 may be a conventional fieldeffect transistor including a source region 704, a drain region 706 anda gate electrode 705. In some embodiments, the transistor 702 mayinclude a layer of a material having an intrinsic stress formed abovethe source region 704, the drain region 706 and/or the gate electrode705. The layer of the material having an intrinsic stress may provide asubstantially constant stress in the channel region of the transistor702. In other embodiments, the channel region of the transistor 702 maybe substantially unstressed.

The transistor 703 may be a transistor having features corresponding tothose of transistor 302 described above with reference to FIGS. 3 a and3 b. In particular, the transistor 703 may include a source region 707similar to source region 104, a drain region 709 similar to drain region105, and a gate electrode 708 similar to gate electrode 108.

Moreover, the transistor 703 includes a layer of a stress-creatingmaterial that provides a stress in the channel region of the transistor703 that is variable in response to an electric field acting on thestress-creating material. The layer of stress-creating material mayinclude a material having a stress hysteresis as described above withreference to FIG. 6. Further features of the layer of stress-creatingmaterial may correspond to the features of the layer 316 ofstress-creating material described above.

The transistor 703 further includes a stress-control contact 710,similar to stress control contact 128, that may be connected to astress-control electrode similar to the top stress-control electrode 317of the transistor 302. A stress provided by the layer of stress-creatingmaterial is variable in response to a signal applied to the layer ofstress-creating material provided in the form of an electric field thatmay be created by applying a voltage difference between the gateelectrode 708 of transistor 703 and the stress-control contact 710.

The circuit 700 further includes a calibration circuit 713. Thecalibration circuit 713 may be electrically connectable to an inputterminal 711 and an output terminal 712 of the current mirror circuit701 and to the stress-control contact 710 of the transistor 703.

The calibration circuit 713 may be electrically connected to the inputterminal 711, the output terminal 712 and the stress-control contact 710for calibrating the current mirror circuit 701, as will be describedbelow. After the calibration of the current mirror circuit 701, thecalibration circuit 713 may be electrically disconnected from the inputterminal 711, the stress-control contact 710 and the output terminal712, and the input terminal 711 and the output terminal 712 may beelectrically connected to other components of the circuit 700 (notshown). For connecting and disconnecting the calibration circuit 713 tothe input terminal 711 and the output terminal 712, the circuit 700 mayinclude transmission gate circuits.

In some embodiments, the circuit 700 may include a plurality of currentmirror circuits similar to current mirror circuit 701, and thecalibration circuit 713 may be alternatively connectable to each of thecurrent mirror circuits. Thus, the other current mirror circuits in thecircuit 700 may be calibrated before or after the calibration of thecurrent mirror circuit 701.

In the current mirror circuit 701, the gate electrodes 705, 708 of thetransistors 702, 703 are electrically connected with each other and areelectrically connected to the input terminal 711. The source regions704, 707 of the transistors 702, 703 may be electrically connected toground.

The current mirror circuit 701 comprises an input current path providedby the input terminal 711, the transistor 702 and the connection of thesource region 704 of the transistor 702 to ground. Additionally, thecurrent mirror circuit 701 comprises an output current path provided bythe output terminal 712, the transistor 703 and the connection of thesource 707 of the transistor 703 to ground. Thus, a current applied tothe input terminal 711 flows through the input current path, and acurrent applied to the output terminal 712 flows through the outputcurrent path.

If a current is applied to the input terminal 711, the current flowsthrough the drain region 706, the channel region and the source region704 of the transistor 702. Due to the connection between the gateelectrode 705 of the transistor 702 and the input terminal 711, which iselectrically connected to the drain region 706 of the transistor 702, agate voltage of the transistor 702 corresponding to current applied tothe input terminal 711 is obtained. Due to the electrical connectionbetween the gate electrodes 705, 708 of the transistors 702, 703, thegate voltage of the transistor 702 is also applied to the gate electrode708 of the transistor 703. Thus, a current flowing from the outputcurrent path may be controlled by the current applied to the inputterminal 711.

If the characteristics of the transistors 702, 703 are substantiallyidentical, the current flowing through the transistor 702 and thecurrent flowing through the transistor 703 are substantially equal. Ifthe transistors 702, 703 have different characteristics, the currentflowing through the input terminal 711 and the transistor 702 and thecurrent flowing through the output terminal 712 and the transistor 703may be different. The current flowing through the output terminal 712 ata given current flowing through the input terminal 711 may depend oncharacteristics of the transistor 703, such as the width of the channelregion of the transistor, and it may also depend on the stress in thechannel region of the transistor 703.

In some embodiments, the current mirror circuit 701 may be adapted forproviding substantially equal currents through the input terminal 711and the output terminal 712. In such embodiments, the transistor 703 maybe formed with a channel region having a width that is substantiallyequal to the width of the channel region of the transistor 702. In otherembodiments, the current mirror circuit 701 may be adapted to provide acurrent through output terminal 712 that is approximately equal to aproduct of a multiplication factor and the current flowing through theinput terminal 711. In such embodiments, the width of the channel regionof the transistor 703 may be approximately equal to a product of themultiplication factor and the width of the channel region of thetransistor 702. For example, for providing a current through the outputterminal 712 that is approximately twice the current flowing through theinput terminal 711, the width of the channel region of the transistor703 may be approximately two times the width of the channel region ofthe transistor 702.

Due to tolerances of the manufacturing process of the circuit 700, theratio between the current flowing through the output terminal 712 andthe current flowing through the input terminal 711 may be different fromthe multiplication factor. To compensate for such deviations, acalibration of the current mirror circuit 701 may be performed by meansof the calibration circuit 713, as will be detailed in the following.

For performing the calibration of the current mirror circuit 701, thecalibration circuit 713 is connected to the input terminal 711, theoutput terminal 712 and the stress-control contact 710. Then, thecalibration circuit 713 applies a current to the input terminal 711 andapplies a voltage to the output terminal 712. The calibration circuit713 detects a current difference between the current flowing through theinput terminal 711 and a ratio between the current flowing through theoutput terminal 712 and the multiplication factor, and applies a voltageto the stress-control contact 710 in response to the detected currentdifference so that the current difference is reduced.

In some embodiments, the calibration circuit 713 may include acomparator. The comparator may have a non-inverting input and aninverting input, and an output. The comparator may be adapted to providea positive output voltage if a voltage applied to the non-invertinginput is greater than a voltage applied to the inverting input, and itmay output a negative output voltage if a voltage applied to thenon-inverting input is smaller than a voltage applied to the invertinginput.

The output of the comparator may be electrically connected to thestress-control contact 710 of the transistor 703. The calibrationcircuit 713 may include circuitry for applying a voltage that isrepresentative of the current flowing through the input terminal 711 ofthe current mirror circuit 701 to the non-inverting input of thecomparator. Additionally, the calibration circuit 713 may includecircuitry for applying a voltage that is representative of a ratiobetween the current flowing through the output terminal 712 of thecurrent mirror circuit 701 and the multiplication factor to theinverting input of the comparator. In particular, in embodiments whereina desired output current of the current mirror circuit 701 is equal tothe input current of the current mirror circuit 701, a voltage that isrepresentative of the current flowing through the output terminal 712may be applied to the inverting input of the comparator.

Thus, the output of the comparator is a positive voltage if the currentdifference between the current flowing through the input terminal 711and the ratio between the current flowing through the output terminal712 and the multiplication factor is greater than zero, and the outputof the comparator is a negative voltage if the current difference isnegative.

The output voltage of the comparator that is applied to thestress-control contact 710 of the transistor 703 may influence thestress provided by the layer of stress-creating material of thetransistor 703 in the channel region of the transistor 703.

In embodiments wherein the transistor 703 is an N-channel transistor asshown in FIG. 7, the layer of stress-creating material of the transistor703 may be adapted such that a greater tensile stress is provided in thechannel region of the transistor 703 and/or a compressive stress in thechannel region 703 is reduced when a positive voltage is applied to thestress-control contact 710, and a tensile stress in the channel regionof the transistor 703 is reduced and/or a greater compressive stress inthe channel region 703 is provided when a negative voltage is applied tothe stress-control contact 710. This may be obtained by an appropriateselection of the material of the layer of stress-creating material inthe transistor 703 and/or by an appropriate selection of parametersemployed in the deposition of the stress-creating material and/or anappropriate poling of the layer of stress-creating material, asdescribed above.

An increase of a tensile stress and/or a reduction of a compressivestress in the channel region of an N-channel transistor may increase anoutput current of the transistor that is obtained at a given gatevoltage. Hence, by applying a positive voltage to the stress-controlcontact 710 of the transistor 703, the output current of the currentmirror circuit 701 flowing through the output terminal 712 may beincreased, and the output current of the current mirror circuit 701flowing through the output terminal 712 of the current mirror circuit701 may be reduced by applying a negative voltage to the stress-controlcontact 710.

Therefore, by applying the output of the comparator to thestress-control contact 710, the absolute value of the current differencebetween the input current and the ratio between the output current andthe multiplication factor may be reduced. Thus, a lack of matchingbetween the transistors 702, 703 may be reduced, so that the ratiobetween the output current of the current mirror circuit 701 and theinput current of the current mirror circuit 701 is in better conformitywith the multiplication factor.

The present disclosure is not limited to embodiments wherein thenon-inverting input of the comparator receives a voltage representativeof the input current and the inverting input of the comparator receivesa voltage representative of the ratio between the output current and themultiplication factor. In other embodiments, a voltage representative ofa ratio between the output current and the multiplication factor may beapplied to the non-inverting input, and a voltage representative of theinput current may be applied to the inverting input.

Thus, a matching of the transistors 702, 703 may be improved inembodiments wherein the layer of stress-creating material of thetransistor 703 provides a smaller tensile stress and/or a greatercompressive stress if a positive voltage is applied to thestress-control contact 710 and the layer of stress-creating materialprovides a greater tensile stress and/or a smaller compressive stress ifa negative voltage is applied to the stress-controlled contact 710.

Moreover, the present disclosure is not limited to embodiments whereinthe transistor 703 has a configuration corresponding to that of thetransistor 302 described above with reference to FIGS. 3 a and 3 b. Inother embodiments, the transistor 703 may have a configurationcorresponding to that of the transistor 102 described above withreference to FIGS. 1 a-1 e, wherein a top stress-control electrode and abottom stress-control electrode are provided above and below the layerof stress-creating material, respectively.

In such embodiments, the output of the comparator may be electricallyconnected to one of a stress-control contact electrically connected tothe top stress-control electrode and a stress-control contactelectrically connected to the bottom stress-control electrode, and theother of the top stress-control electrode and the bottom stress-controlelectrode may be grounded, or a substantially constant bias voltage maybe applied to the other of the top stress-control electrode and thebottom stress-control electrode. Thus, the stress provided by the layerof stress-creating material of the transistor 703 may be controlledsubstantially independent of the voltage applied to the gate electrode708 of the transistor 703.

In further embodiments, both the transistor 702 and the transistor 703may include a layer of stress-creating material and the calibrationcircuit 713 may be adapted for adjusting both the stress provided by thelayer of stress-creating material in the transistor 702 and the stressprovided by the layer of stress-creating material in the transistor 703.

After the calibration of the current mirror circuit 701, the calibrationcircuit 713 may be electrically disconnected from the current mirrorcircuit 701. Due to the stress hysteresis of the layer(s) ofstress-creating material in the transistor 702 and/or the transistor703, the stress may be substantially maintained, so that the matchingbetween the transistors 702, 703 obtained by the calibration process ismaintained.

In further embodiments, the calibration circuit 713 may be adapted forsetting the multiplication factor. In such embodiments, the calibrationcircuit 713 may have an external input for setting the multiplicationfactor.

FIG. 8 shows a schematic circuit diagram of a sensor 800 according to anembodiment. The sensor 800 includes a transistor 801 including a sourceregion 802, a drain region 804 and a gate electrode 803. The transistor801 may be an N-channel transistor, as shown in FIG. 8. In otherembodiments, the transistor 801 may be a P-channel transistor. The gateelectrode 803 of the transistor 801 may be electrically connected to aread terminal 806 and the drain region 804 may be electrically connectedto an output terminal 807. The source region 802 of the transistor 801may be connected to ground.

The transistor 801 includes a layer of stress-creating material that isarranged to provide a stress in the channel region of the transistor801, wherein the stress provided in the channel region of the transistor801 is variable in response to an external influence acting on thestress-creating material. The stress-creating material may be amagnetostrictive material, as described above, and the externalinfluence may be a magnetic field 805. Thus, the stress provided in thechannel region of the transistor 801 may be variable in response to themagnetic field 805 acting on the stress-creating material.

For performing a measurement by means of the sensor 800, a gate voltagemay be applied to the read terminal 806 for switching the transistor 801into the on-state. Additionally, a voltage may be applied to the outputterminal 807. Since the transistor 801 is in the on-state, a currentthrough the transistor 801 that flows through the channel region of thetransistor 801 may be obtained.

As detailed above, the electric conductivity of the channel region ofthe transistor 801 depends on the stress in the channel region. Sincethe transistor 801 includes a layer of stress-creating materialproviding a stress in the channel region of the transistor that isvariable in response to an external influence, such as magnetic field805 acting on the layer of stress-creating material, the current flowingthrough the transistor 801 may depend on the strength of the externalinfluence. Therefore, the strength of the external influence, inparticular, the strength of magnetic field 805, may be determined bymeasuring the current flowing through the transistor 801.

For applying voltages to the read terminal 806 and the output terminal807, and for measuring the current flowing through the output terminal807 and the transistor 801, a circuit (not shown) may be provided.

FIG. 9 shows a schematic circuit diagram of an inverter 900 according toan embodiment. The inverter 900 includes a pull-up transistor 901 thatmay be a P-channel transistor and a pull-down transistor 902 that may bean N-channel transistor. The pull-up transistor 901 includes a sourceregion 906, a drain region 907 and a gate electrode 908. The pull-downtransistor 902 includes a source region 910, a drain region 911 and agate electrode 912.

The pull-up transistor 901 and the pull-down transistor 902 areelectrically connected in series between a high voltage power supplyterminal 903 and a low voltage power supply terminal 904, wherein thedrain regions 907, 911 of the pull-up transistor 901 and the pull-downtransistor 902 are connected to each other, the source region 906 of thepull-up transistor 901 is electrically connected to the high voltagepower supply terminal 903, and the source region 910 of the pull-downtransistor 902 is electrically connected to the low voltage power supplyterminal 904.

The gate electrodes 908, 912 of the pull-up transistor 901 and thepull-down transistor 902 are electrically connected to an input terminal905. An output terminal 914 of the inverter 900 is electricallyconnected to the drain regions 907, 911 of the pull-up transistor 901and the pull-down transistor 902.

If a relatively high voltage is applied to the input terminal 905, thepull-up transistor 901, being a P-channel transistor, is switched to theoff-state, and the pull-down transistor 902, being an N-channeltransistor, is switched to the on-state. Thus, the output terminal 914is electrically connected to the low voltage power supply terminal 904and a relatively low voltage is obtained at the output terminal 914. Ifa relatively low voltage is applied to the input terminal 905, thepull-up transistor 901 is switched into the on-state and the pull-downtransistor 902 is switched into the off-state. Thus, the output terminal914 is electrically connected to the high voltage power supply terminal903, so that a relatively high voltage is obtained at the outputterminal 914.

Each of the pull-up transistor 901 and the pull-down transistor 902 mayhave features corresponding to those of the transistor 302 describedabove with reference to FIGS. 3 a and 3 b. In particular, the pull-uptransistor 901 may include a layer of stress-creating material providinga stress in the channel region of the pull-up transistor that isvariable in response to an electric field applied to the layer ofstress-creating material. Moreover, the pull-up transistor 901 includesa stress-control contact 909 that is electrically connected to astress-control electrode provided on a side of the layer ofstress-creating material that is opposite the gate electrode 908 of thepull-up transistor. Thus, a voltage difference between thestress-control contact 909 and the gate electrode 908 creates anelectric field in the layer of stress-creating material of the pull-uptransistor 901.

Similarly, the pull-down transistor 902 may include a layer ofstress-creating material providing a stress in the channel region of thepull-down transistor 902 that is variable in response to an electricfield applied to the layer of stress-creating material. Moreover, thepull-down transistor 902 includes a stress-control electrode provided ona side of the layer of stress-creating material opposite the gateelectrode 912 of the pull-down transistor 902 and a stress-controlcontact 913 electrically connected to the stress-control electrode, sothat a voltage difference between the stress-control contact 913 and thegate electrode 912 creates an electric field in the layer ofstress-creating material of the pull-down transistor 902.

The layers of stress-creating material in the transistors 901, 902 maybe adapted to provide substantially no stress hysteresis or only a smallamount of stress hysteresis.

The stress-control contacts 909, 913 of the pull-up transistor 901 andthe pull-down transistor 902, respectively, may be electricallyconnected to each other and to ground. Thus, the stress-control contacts909, 913 may be maintained at a substantially constant voltage that maybe approximately equal to the above-mentioned relatively low voltage.Thus, a relatively strong electric field is applied to the layers ofstress-creating material in the pull-up transistor 901 and the pull-downtransistor 902 if the relatively high voltage is applied to the inputterminal 905, and a relatively small electric field or substantially noelectric field is applied to the layers of stress-creating material inthe pull-up transistor 901 and the pull-down transistor 902 if therelatively low voltage is applied to the input terminal 905.

The layers of stress-creating material in the pull-up transistor 901 andthe pull-down transistor 902 may be adapted to provide an increase of atensile stress and/or a reduction of a compressive stress in the channelregions of the transistors 901, 902 when the electric field applied tothe layers of stress-creating material is increased, and to provide areduction of tensile stress and/or an increase of compressive stresswhen the electric field applied to the layers of stress-creatingmaterial is reduced.

Hence, if the relatively high voltage is applied to the input terminal905, the channel regions of the transistors 901, 902 are exposed to amore tensile stress than if the relatively low voltage is applied to theinput terminal 905. An increase of tensile stress or a reduction ofcompressive stress may increase the conductivity of the channel regionof the pull-down transistor 902, being an N-channel transistor, and mayreduce the conductivity of the channel region of pull-up transistor 901,being a P-channel transistor. A reduction of tensile stress or anincrease of compressive stress, which may be obtained when therelatively low voltage is applied to the input terminal 905, increasesthe electric conductivity of the channel region of pull-up transistor901 and reduces the electrical conductivity of the channel region ofpull-down transistor 902.

Thus, the electrical conductivity of the channel region of the one ofthe pull-up transistor 901 and the pull-down transistor 902 that is inthe on-state may be increased, and the conductivity of the channelregion of the one of the pull-up transistor 901 and the pull-downtransistor 902 that is in the off-state may be reduced. This may allowan improvement of the switching speed of the inverter 901 compared toinverters wherein no layers of stress-creating material providing avariable stress are provided in the pull-up transistor and the pull-downtransistor.

FIG. 10 shows an inverter 1000 according to another embodiment. Similarto the inverter 900 described above with reference to FIG. 9, theinverter 1000 includes a pull-up transistor 1001, being a P-channeltransistor, and a pull-down transistor 1002, being an N-channeltransistor, which are electrically connected in series between a highvoltage power supply terminal 1003 and a low voltage power supplyterminal 1004. A drain region 1007 of the pull-up transistor 1001 and adrain region 1012 of the pull-down transistor 1002 are electricallyconnected to each other and to an output terminal 1016.

A source region 1006 of the pull-up transistor 1001 is electricallyconnected to the high voltage power supply terminal 1003, and a sourceregion 1011 of the pull-down transistor 1002 is electrically connectedto the low voltage power supply terminal 1004. A gate electrode 1008 ofthe pull-up transistor 1001 and a gate electrode 1013 of the pull-downtransistor 1002 are electrically connected to each other and to an inputterminal 1005.

Each of the pull-up transistors 1001 and the pull-down transistor 1002may have features corresponding to those of transistor 102 describedabove with reference to FIGS. 1 a-1 e. In particular, each of thepull-up transistor 1001 and the pull-down transistor 1002 may include alayer of stress-creating material similar to the layer 116 ofstress-creating material, a bottom stress-control electrode similar tobottom stress-control electrode 115 and a top stress-control electrodesimilar to top stress-control electrode 117. Each of the pull-uptransistor 1001 and the pull-down transistor 1002 includes astress-control contact 1009 and 1014, respectively, that is electricallycollected to one of the top stress-control electrode and the bottomstress-control electrode, and a stress-control contact 1010 and 1015,respectively, providing electrical contact to the other of the topstress-control electrode and the bottom stress-control electrode.

The layers of stress-creating material of the pull-up transistor 1001and the pull-down transistor 1002 may be adapted to have substantiallyno stress hysteresis or only a small amount of stress hysteresis.

The stress-control contacts 1009, 1014 may be electrically connected toeach other and to the high voltage power supply terminal 1003, so that arelatively high voltage is applied to the stress-control contacts 1009,1014. The stress-control contacts 1010, 1015 may be electricallyconnected to the input terminal 1005.

If a relatively high voltage is applied to the input terminal 1005, arelatively small electric field or substantially no electric field atall is provided in the layers of stress-creating material of the pull-uptransistor 1001 and the pull-down transistor 1002, and a relativelystrong electric field is provided in the layers of stress-creatingmaterial of the transistors 1001, 1002, if a relatively low voltage isapplied to the input terminal 1005.

The layers of stress-creating material of the pull-up transistor 1001and the pull-down transistor 1002 may be formed of a material providinga stronger compressive or a weaker tensile stress in the presence of arelatively strong electric field than in the absence of an electricfield. Thus, if a relatively low voltage is applied to the inputterminal 1005, a weaker tensile stress or a greater compressive stressis provided in the channel regions of the transistors 1001, 1002, and ifa relatively high electric voltage is applied to the input terminal1005, a small compressive stress or greater tensile stress is providedin the channel regions of the transistors 1001, 1002.

Hence, similar to the inverter 900 described above with reference toFIG. 9, the electrical conductivity of the channel region of the one ofthe transistors 1001, 1002 that is in the on-state is increased, and theconductivity of the channel region of the other of the transistors 1001,1002 that is in the off-state is reduced. Hence, the switching speed ofthe inverter may be improved.

The inverter 1000 of FIG. 10 allows the use of differentstress-providing materials in the layers of stress-creating material ofthe pull-up transistor and pull-down transistor whose behavior in thepresence of an electric field is inverse to the behavior of thestress-creating materials provided in the embodiment of FIG. 9.

FIG. 11 shows a schematic circuit diagram of a memory cell 1100 andportions of a support circuit 1120 according to an embodiment.

The memory cell 1100 includes a storage transistor 1101. The storagetransistor 1101 may be a transistor similar to transistor 302 describedabove with reference to FIGS. 3 a and 3 b. In particular, the transistor1101 includes a source region 1102, a drain region 1103 and a gateelectrode 1104. Additionally, the storage transistor 1101 includes alayer of stress-creating material similar to the layer 316 ofstress-creating material and a stress-control contact 1105 electricallyconnected to a stress-control electrode similar to the topstress-control electrode 317 that is provided on a side of the layer ofstress-creating material opposite the gate electrode 1104.

The stress-creating material in the layer of stress-creating material ofthe storage transistor 1101 is adapted to provide a stress in thechannel region of the storage transistor 1101 that is variable inresponse to an electric field applied to the layer of stress-creatingmaterial. The electric field applied to the layer of stress-creatingmaterial may be provided by applying a voltage between thestress-control contact 1105 and the gate electrode 1104 of the storagetransistor 1101. The stress-creating material has a stress hysteresis,so that at least a portion of the stress provided in response to theelectric field is maintained after removal of the electric field. Thus,a stress of the layer of the stress-creating material of the storagetransistor 1101 may be set by applying a voltage between the gateelectrode 1104 and the stress-control electrode 1105, and the set stressof the layer of stress-creating material may be maintained when thevoltage is no longer applied.

The support circuit 1120 includes a high voltage power supply terminal1108 and the memory cell 1100 includes a low voltage power supplyterminal 1109. The storage transistor 1101 and a sense transistor 1111that is provided in the support circuit 1120 are electrically connectedin series between the high voltage power supply terminal 1108 and thelow voltage power supply terminal 1109.

The memory cell 1100 may be part of a memory array comprising aplurality of memory cells having a configuration corresponding to thatof the memory cell 1100. The support circuit 1120 may be provided in asupport circuit block arranged around the array, and may be electricallyconnected to the memory cell 1100 when data is to be read from thememory cell 1100 or data is to be written to the memory cell 1100. Whendata is to be read from another memory cell or data is to be written toanother memory cell, the support circuit 1120 may be electricallyconnected to the other memory cell. For this purpose, further circuitelements (not shown) may be provided, as schematically shown by dots ( .. . ) in FIG. 11. Thus, in the array of memory cells, only onetransistor needs to be provided for each memory cell, so that the amountof space required by the array of memory cells may be reduced.

The storage transistor 1101 may be an N-channel transistor and the sensetransistor 1111 may be a P-channel transistor. In such embodiments, thesource region of the storage transistor 1101 may be electricallyconnected to the low voltage power supply terminal 1109 and a sourceregion 1112 of the sense transistor 1111 may be electrically connectedto the high voltage power supply terminal 1108. The gate electrode 1104of the storage transistor 1101 and a gate electrode 1114 of the sensetransistor 1111 may be electrically connected to a read terminal 1106.The stress-control contact 1105 of the storage transistor 1101 may beelectrically connected to a write terminal 1107. Drain regions of thetransistors 1101, 1111 may be electrically connected to a bit lineterminal 1110.

Threshold voltages of the storage transistor 1101, being an N-channeltransistor, and the sense transistor 1111, being a P-channel transistor,may be adapted such that there is a range of voltages applied to theread terminal 1106, wherein both the storage transistor 1101 and thesense transistor 1111 are in an electrically conductive on-state.

The operation of the memory cell 1100 will be explained with referenceto FIG. 12. FIG. 12 shows a schematic diagram illustrating arelationship between a voltage of the bit line terminal 1110 andcurrents through the storage transistor 1101 and the sense transistor1111. A horizontal coordinate axis 1201 denotes the voltage of the bitline terminal 1110, and a vertical coordinate axis 1202 denotes theamperage of the current. In the following, it is assumed that no currentis drawn through the bit line terminal 1110, which may be obtained byconnecting the bit line terminal 1110 to a sense amplifier having highinput impedance.

Thus, the current flowing through the sense transistor 1111 and thecurrent flowing through the storage transistor 1101 are substantiallyequal. Curve 1203 denotes a relationship between the voltage of the bitline terminal 1110 and the current through the storage transistor 1101that is obtained for a first stress in the channel region of the storagetransistor 1101. Curve 1204 denotes a relationship between the voltageof the bit line terminal 1110 and the current through the storagetransistor 1101 that is obtained for a second stress in the channelregion of the storage transistor 1101, wherein the first stress is moretensile or less compressive than the second stress. Since the mobilityof charge carriers in the channel region of N-channel storage transistor1101 increases with an increasing tensile stress in the channel region,the current through the storage transistor 1100 at the first stress isgreater than the current at the second stress at a given voltage of thebit line terminal 1110.

Curve 1205 denotes a relationship between the current through the sensetransistor 1111 and the voltage of the bit line terminal 1110. Since thevoltage applied between the source region 1112 and the drain region 1113of the sense transistor 1111 decreases when the voltage of the bit lineterminal 1110 increases, and increases when the voltage of the bit lineterminal 1110 decreases, the current through the sense transistor 1111decreases with increasing voltage of the bit line terminal 1110.

In the absence of a substantial current through the bit line terminal1110, the currents through the sense transistor 1111 and the storagetransistor 1101 are substantially equal, so that the voltage of the bitline terminal 1110 is given by an intersection between the curve 1205and the one of the curves 1203, 1204 that corresponds to the currentstress provided by the layer of stress-creating material in the storagetransistor 1101.

Hence, for the first stress, a voltage 1206 of the bit line terminal1110 may be obtained, and for the second stress, a voltage 1207 of thebit line terminal 1110 may be obtained.

This relationship between the stress provided by the layer ofstress-creating material in the storage transistor 1101 may be used forstoring one bit of data in the memory cell 1100. The first stress(represented by curve 1203) may be identified with a logical zero, andthe second stress (represented by curve 1204) may be identified with alogical one.

For reading the bit of data, a gate voltage may be applied to the readterminal 1106, and the voltage obtained at the bit line terminal 1110may be measured. For writing data to the memory cell 1100, a voltage maybe applied between the write terminal 1107 and the read terminal 1106that is suitable for providing the first stress (for storing a logicalzero) or the second stress (for storing a logical one) in the layer ofstress-creating material of the storage transistor 1101.

FIG. 13 shows a schematic circuit diagram of a memory cell 1300according to an embodiment. Some features of the memory cell 1300 maycorrespond to features of the memory cell 1100 described above withreference to FIG. 11. In FIGS. 13 and 11, corresponding features havebeen denoted by like reference numerals, and features of components ofthe memory cell 1300 may correspond to features of components of thememory cell 1100 denoted by like reference numerals. Similar to thememory cell 1100, the memory cell 1300 includes a storage transistor1101 including a source region 1102, a drain region 1103 and a gateelectrode 1104. A stress-control contact 1105 is electrically connectedto a stress-control electrode for applying an electric field to a layerof stress-creating material.

Additionally, the memory cell 1300 includes a storage transistor 1301that is electrically connected in series with the storage transistor1101 between a high voltage power supply terminal 1108 and a low voltagepower supply terminal 1109. Drain regions of the transistors 1101, 1301are electrically connected to a bit line terminal 1110.

Similar to the storage transistor 1101, the storage transistor 1301 mayhave a configuration corresponding to that of the transistor 302described above with reference to FIGS. 3 a and 3 b. Storage transistor1301 may be a P-channel transistor and storage transistor 1101 may be anN-channel transistor. Further features of the storage transistor 1301may correspond to features of the storage transistor 1101. Inparticular, the storage transistor 1301 may include a layer of astress-creating material that is formed of substantially the samematerial as the layer of stress-creating material of storage transistor1101. A stress-control contact 1304 of the storage transistor 1301 maybe electrically connected to a stress-control electrode that is providedon a side of the layer of stress-creating material of the storagetransistor 1301 opposite the gate electrode 1304.

The stress-control contacts 1105, 1305 of the storage transistors 1101,1301 may be electrically connected to each other and to a write terminal1107. The gate electrodes 1104, 1304 may be electrically connected toeach other and to a read terminal 1106. Hence, electric fields appliedto the layers of stress-creating material of the storage transistors1101, 1301 may be approximately equal and, since the layers ofstress-creating material of the storage transistors 1101, 1301 may beformed of substantially the same material, the stress provided in thechannel regions of the storage transistors 1101, 1301 may beapproximately equal.

However, since storage transistor 1101 is an N-channel transistor andstorage transistor 1301 is a P-channel transistor, the influence of thestress on the conductivities of the storage transistors 1301, 1101 isdifferent. A particular stress that increases the conductivity of thechannel region of the storage transistor 1301 may decrease theconductivity of the channel region of the storage transistor 1101, and astress increasing the conductivity of the channel region of the storagetransistor 1101 may decrease the conductivity of the channel region ofthe storage transistor 1301.

The operation of the memory cell 1300 will be explained with referenceto FIG. 14. FIG. 14 shows a schematic diagram 1400 illustrating arelationship between a voltage of the bit line terminal 1110 andcurrents through the storage transistors 1101, 1301. Similar to thememory cell 1100 described above with reference to FIG. 11, the bit lineterminal 1110 may be electrically connected to a sense amplifier havinga high input impedance, so that substantially no current flows throughthe bit line terminal 1110. Thus, a current flowing through the storagetransistor 1101 may be approximately equal to a current flowing throughthe storage transistor 1301.

In FIG. 14, a horizontal coordinate axis 1401 denotes the voltage of thebit line terminal 1110, and a vertical coordinate axis 1402 denotes thecurrents through the storage transistors 1101, 1301. Curves 1403, 1404schematically illustrate a relationship between the current through thestorage transistor 1101 and the voltage of the bit line terminal 1110for a first stress and a second stress, respectively, wherein the firststress is more tensile or less compressive than the second stress,similar to curves 1203, 1204 shown in FIG. 12.

Curves 1405, 1406 schematically illustrate the relationship between thevoltage of the bit line terminal 1110 and the current through thestorage transistor 1301 for the first stress and the second stress,respectively. Due to the different influence of stress on theconductivity of the channel region in P-channel transistors andN-channel transistors, in the storage transistor 1301, at the firststress, a smaller current is obtained at a given source-gate voltagethan at the second stress.

Since the currents through the storage transistors 1101, 1301 areapproximately equal, the voltage of the bit line terminal 1110 that isobtained at the first stress corresponds to an intersection betweencurves 1403, 1405, and the voltage of the bit line terminal 1110obtained at the second stress corresponds to an intersection of thecurves 1404 and 1406. Thus, at the first stress, a voltage 1407 isobtained, and a voltage 1408 is obtained at the second stress.

Reading data from and writing data to the memory cell 1300 may beperformed in the same way as in the memory cell 1100 described abovewith reference to FIG. 11. However, since, in the memory cell 1300, thestress in the channel region is varied both in the storage transistor1101 and the storage transistor 1301, a greater signal margincorresponding to a difference between the voltages 1408, 1407 may beobtained.

FIG. 15 shows a schematic cross-sectional view of a semiconductorstructure 1500 including a resistor 1528 according to an embodiment. Thesemiconductor structure 1500 includes a substrate 1501 including atrench isolation structure 1506 that separates the resistor 1528 fromother circuit elements in the semiconductor structure 1500. Features ofthe substrate 1501 and the trench isolation structure 1506 maycorrespond to those of the substrate 101 and the trench isolationstructure 106 described above with reference to FIGS. 1-1 e, andcorresponding methods may be used for the formation thereof.

The resistor 1528 further comprises a semiconductor region 1504 formedin the substrate 1501. The semiconductor region 1504 may be differentlydoped than a portion of the substrate 1501 below the semiconductorregion 1504, so that there is a PN transition between the semiconductorregion 1504 and the portion of the substrate 1501 below thesemiconductor region 1504. The PN transition may provide electricalinsulation between the semiconductor region 1504 and the portion of thesubstrate 1501 below the semiconductor region 1504. The semiconductorregion 1504 may be formed by means of ion implantation, similar to thesource and drain regions 104, 105 described above with reference toFIGS. 1 a-1 e.

Above the semiconductor region 1504, an electrically insulating layer1514, a bottom stress control electrode 1515, a layer 1516 ofstress-creating material and a top stress control electrode 1517 may beprovided. The electrically insulating layer 1514, the bottom stresscontrol electrode 1515, the layer 1516 of stress-creating material andthe top stress control electrode 1517 may have features corresponding tothose of the electrically insulating layer 114, the bottom stresscontrol electrode 115, the layer 116 of stress-creating material and thetop stress-control electrode 117 described above with reference to FIGS.1 a-1 e, and corresponding techniques, including methods of depositionand/or etching, may be used for the formation thereof.

The semiconductor structure 1500 further comprises a dielectric material1518 formed above the resistor 1528. In the dielectric material 1518,contact vias 1519, 1520, 1521 and 1522 may be formed. An electricallyinsulating liner layer 1523 may be formed at the sidewalls of thecontact vias 1519, 1520, 1521, 1522.

In the contact vias 1519, 1522, resistor contacts 1524, 1525 may beformed, which provide electrical connection to ends of the semiconductorregions 1504. An electric current may flow between the resistor contacts1524, 1525 through the semiconductor region 1504, wherein thesemiconductor region 1504 may provide a substantially ohmic resistanceto the electric current.

In the contact vias 1520, 1521, stress control contacts 1526, 1527providing electrical connection to the bottom stress control electrode1515 and the top stress control electrode 1517, respectively, may beprovided.

Further features of the dielectric material, the contact vias 1519,1520, 1521, 1522, the liner layer 1523, the resistor contacts 1524, 1525and the stress control contacts 1526, 1527 may correspond to those ofthe dielectric material 118, the contact vias 119-123, the liner layer124 and the contacts 125-129 described above with reference to FIGS. 1a-1 e, and corresponding methods may be used for the formation thereof.

By applying an electric voltage between the stress control contacts1526, 1527, an electric field may be created between the bottom stresscontrol electrode 1515 and the top stress control electrode 1517. Inresponse to the electric field, the layer 1516 of stress-creatingmaterial may provide a stress whose strength depends on the electricvoltage applied between the stress control contacts 1526, 1527.

The stress provided by the layer 1516 of stress-creating material mayprovide a stress in the semiconductor region 1504 below the layer 1516of stress-creating material, which may influence the mobility of chargecarriers (electrons or holes, depending on whether the semiconductormaterial 1504 is N-doped or P-doped). An increase of the mobility ofcharge carriers in the semiconductor material 1504 may lead to a smallerresistance of the semiconductor region 1504, and a reduction of themobility of the charge carriers may lead to a greater resistance of thesemiconductor region 1504. Thus, the resistance provided by the resistor1528 may be controlled by varying the voltage applied between the stresscontrol contacts 1526, 1527.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

What is claimed:
 1. A circuit element, comprising: a semiconductorregion; and a layer of a stress-creating material, said stress-creatingmaterial providing a stress that is variable in response to a signalacting on said stress-creating material; wherein said layer ofstress-creating material is arranged to provide a stress in saidsemiconductor region, said stress provided in said semiconductor regionbeing variable in response to said signal acting on said stress-creatingmaterial.
 2. The circuit element of claim 1, wherein said circuitelement comprises a transistor comprising a source region, a drainregion, a channel region and a gate electrode, and said semiconductorregion wherein the variable stress is provided comprises at least saidchannel region.
 3. The circuit element of claim 2, wherein said signalacting on said layer of stress-creating material comprises at least oneof an electric field, an electric current and a magnetic field.
 4. Thecircuit element of claim 3, wherein said layer of stress-creatingmaterial comprises at least one of a piezoelectric material, anelectrostrictive material, a magnetostrictive material and acurrent-strictive material.
 5. The circuit element of claim 2, whereinsaid layer of stress-creating material comprises at least one of anelectrostrictive material and a piezoelectric material, said circuitelement comprising at least one stress-control electrode adjacent saidlayer of stress-creating material for applying an electric field to saidlayer of stress-creating material, said electric field providing saidsignal acting on said stress-creating material.
 6. The circuit elementof claim 5, wherein said at least one stress-control electrode comprisesa first and a second stress-control electrode provided on opposite sidesof said layer of stress-creating material.
 7. The circuit element ofclaim 5, wherein said at least one stress-control electrode is providedon a side of said layer of stress-creating material that is oppositesaid gate electrode, wherein a voltage difference between said gateelectrode and said stress-control electrode creates the electric fieldproviding said signal acting on said stress-creating material.
 8. Thecircuit element of claim 2, wherein said layer of stress-creatingmaterial is formed above said source region, said drain region and saidgate electrode.
 9. The circuit element of claim 2, wherein said sourceregion, said drain region and said channel region are formed in asemiconductor material, said gate electrode is formed above saidsemiconductor material, and said layer of stress-creating material isformed above said semiconductor material and said gate electrode. 10.The circuit element of claim 2, wherein said stress-creating materialhas a stress hysteresis, wherein at least a portion of said stressprovided in response to said signal is maintained after removal of saidsignal.
 11. The circuit element according to claim 10, wherein saidstress-creating material comprises at least one of[Pb(Zn_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x), wherein x is greater than0 and less than about 0.1,[Pb(Mg_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x), wherein x is greater than0 and less than about 0.5, and0.99[Bi_(1/2)(Na_(0.82)K_(0.18))_(1/2)(Ti_(1-x)Zr_(x))O₃]-0.01LiSbO₃,wherein x is in a range from about 0 to about 0.03.
 12. The circuitelement of claim 11, wherein said stress-creating material comprises[Pb(Mg_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x), wherein x is in a rangefrom about 0.3 to about 0.4.
 13. The circuit element of claim 2, whereinsaid stress-creating material has at least one of substantially nostress hysteresis and a small stress hysteresis.
 14. The circuit elementof claim 13, wherein said stress-creating material comprisesPb(Mg_(1/3)Nb_(2/3))O₃.
 15. The circuit element of claim 2, wherein saidstress-creating material comprises at least one of a relaxorferroelectric and a piezoceramic material.
 16. A method, comprising:providing a substrate comprising a semiconductor material; forming agate insulation layer and a gate electrode over said semiconductormaterial; forming a source region and a drain region in saidsemiconductor material adjacent said gate electrode, a portion of saidsemiconductor material below said gate electrode providing a channelregion; and forming a layer of a stress-creating material over saidsource region, said drain region and said gate electrode, saidstress-creating material providing a stress in said channel region thatis variable in response to a signal acting on said stress-creatingmaterial.
 17. The method of claim 16, wherein said layer ofstress-creating material comprises a magnetostrictive material, andwherein the method further comprises: forming a dielectric material oversaid layer of stress-creating material; and forming a source contactproviding an electrical connection to said source region, a draincontact providing an electrical connection to said drain region and agate contact providing an electrical connection to said gate electrodein said dielectric material.
 18. The method of claim 16, wherein saidlayer of stress-creating material comprises at least one of anelectrostrictive material and a piezoelectric material, and wherein themethod further comprises: forming a first stress-control electrode oversaid layer of stress-creating material; forming a dielectric materialover said first stress-control electrode; and forming a source contactproviding an electrical connection to said source region, a draincontact providing an electrical connection to said drain region, a gatecontact providing an electrical connection to said gate electrode and afirst stress-control contact providing an electrical connection to saidfirst stress-control electrode in said dielectric material.
 19. Themethod of claim 16, wherein the formation of said layer ofstress-creating material comprises performing a pulsed laser depositionprocess.
 20. The method of claim 19, wherein at least one of[Pb(Zn_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x), wherein x is greater than0 and less than about 0.1,[Pb(Mg_(1/3)Nb_(2/3))O₃]_((1-x))—[PbTiO₃]_(x), wherein x is greater than0 and less than about 0.5, in particular in a range from about 0.3 toabout 0.4, Pb(Mg_(1/3)Nb_(2/3))O₃,0.99[Bi_(1/2)(Na_(0.82)K_(0.18))_(1/2)(Ti_(1-x)Zr_(x))O₃]-0.01LiSbO₃,wherein x is in a range from about 0 to about 0.03, a relaxorferroelectric and a piezoceramic material is deposited in said pulsedlaser deposition process.
 21. A circuit element, comprising: asemiconductor region; a layer of a stress-creating material, saidstress-creating material providing a stress that is variable in responseto a signal acting on said stress-creating material, wherein said layerof stress-creating material is arranged to provide a stress in saidsemiconductor region, said stress provided in said semiconductor regionbeing variable in response to said signal acting on said stress-creatingmaterial; and a resistor, wherein said semiconductor region iselectrically connected between a first resistor contact and a secondresistor contact and provides a substantially ohmic resistance that isvariable in response to the variable stress provided by said layer ofstress-creating material.
 22. The circuit element of claim 21, whereinsaid layer of stress-creating material comprises at least one of anelectrostrictive and a piezoelectric material, and wherein said circuitelement further comprises at least one stress-control electrode adjacentsaid layer of stress-creating material, said electric field providingsaid signal acting on said stress-creating material.
 23. The circuitelement of claim 22, wherein said stress-creating material has a stresshysteresis, wherein at least a portion of said stress provided inresponse to said signal is maintained after removal of said signal. 24.The circuit element of claim 22, wherein said stress-creating materialhas at least one of substantially no stress hysteresis and a smallstress hysteresis.
 25. A method, comprising: providing a substratecomprising a semiconductor material; forming a gate insulation layer anda gate electrode over said semiconductor material; forming a sourceregion and a drain region in said semiconductor material adjacent saidgate electrode, a portion of said semiconductor material below said gateelectrode providing a channel region; forming an electrically insulatinglayer over said source region, said drain region and said gateelectrode; forming a first stress-control electrode over saidelectrically insulating layer; forming a layer of a stress-creatingmaterial comprising at least one of an electrostrictive material and apiezoelectric material over said first stress-control electrode and oversaid source region, said drain region and said gate electrode, saidstress-creating material providing a stress in said channel region thatis variable in response to a signal acting on said stress-creatingmaterial; forming a second stress-control electrode over said layer ofstress-creating material; forming a dielectric material over said firststress-control electrode; and forming a source contact providing anelectrical connection to said source region, a drain contact providingan electrical connection to said drain region, a gate contact providingan electrical connection to said gate electrode and a firststress-control contact providing an electrical connection to said secondstress-control electrode in said dielectric material.
 26. The method ofclaim 25, further comprising forming a second stress-control contactproviding an electrical connection to said second stress-controlelectrode in said dielectric material.